PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES

被引：55

作者：

GERETH, R

SCHERBER, W

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 09期

关键词：

D O I：

10.1149/1.2404452

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1248 / &

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[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[2] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
LEE, CH
GRUBER, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 717 - &
[4] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE
DOO, VY
NICHOLS, DR
SILVEY, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &
[5] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
LENZLINGER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +
[6] GERETH R, 1970, 144 LOS ANG M SOC PA
[7] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING
HU, SM
GREGOR, LV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 826 - +
[8] SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN
KUWANO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) : 876 - &
[9] PREPARATION AND PROPERTIES OF SILICON NITRIDE PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN - PREPARATION AND PROPERTIES OF SILICON NITRIDE
KUWANO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (01) : 88 - &
[10] ANALYSIS OF SILICON NITRIDE LAYERS DEPOSITED FROM SIH4 AND N2 ON SILICON
MEYER, O
SCHERBER, W
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1909 - &