ANALYSIS OF SILICON NITRIDE LAYERS DEPOSITED FROM SIH4 AND N2 ON SILICON

被引：23

作者：

MEYER, O

SCHERBER, W

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1971年 / 32卷 / 08期

关键词：

D O I：

10.1016/S0022-3697(71)80156-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

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页码：1909 / &

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[4] SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN
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[5] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
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