SILICON NITRIDE FILMS BY REACTIVE SPUTTERING

被引：78

作者：

HU, SM

GREGOR, LV

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 08期

关键词：

D O I：

10.1149/1.2426749

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：826 / +

页数：1

共 18 条

[1] SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J].

ANDERSON, GS ;

MAYER, WN ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2991-&

[2]

BURKHARDT PJ, PRIVATE COMMUNICATIO

[3] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J].

DAVIDSE, PD ;

MAISSEL, LI .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :574-&

[4] TEMPERATURE DEPENDENCE OF CONDUCTIVITY OF SILICON-SILICON DIOXIDE INTERFACE [J].

DESHPANDE, RY .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :619-+

[5]

DOO VY, 1965, OCT BUFF M SOC

[6] ZUR KENNTNIS DES SYSTEMS SILICIUM-STICKSTOFF [J].

GLEMSER, O ;

BELTZ, K ;

NAUMANN, P .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1957, 291 (1-4) :51-66

[7] CRYSTAL STRUCTURES OF SILICON NITRIDE [J].

HARDIE, D ;

JACK, KH .

NATURE, 1957, 180 (4581) :332-333

[8] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].

HU, SM ;

KERR, DR ;

GREGOR, LV .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&

[9] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

HU, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :693-+

[10]

HU SM, UNPUBLISHED DATA

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