TEMPERATURE DEPENDENCE OF CONDUCTIVITY OF SILICON-SILICON DIOXIDE INTERFACE

被引：6

作者：

DESHPANDE, RY

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 08期

关键词：

D O I：

10.1016/0038-1101(65)90029-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：619 / +

页数：1

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共 26 条

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
ATALLA, MM
TANNENBAUM, E
SCHEIBNER, EJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783
[2] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION
ATALLA, MM
TANNENBAUM, E
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946
[3] QUENCHED-IN DEFECTS IN P-TYPE SILICON
BEMSKI, G
DIAS, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2983 - +
[4] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON
CORBETT, JW
MCDONALD, RS
WATKINS, GD
[J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +
[5] EFFECT OF AMBIENTS ON CHARGE DENSITY AND CARRIER MOBILITY IN A SILICON-SILICON DIOXIDE INTERFACE
DESHPANDE, RY
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 313 - +
[6] DESHPANDE RY, 1964, UCRL11508 LAWR RAD L
[7] EDAGAWA H, 1964, JPN J APPL PHYS, V3, P644
[8] EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN INVERSION LAYER ON P-TYPE SILICON ( TRANSVERSE ELECTRIC FIELD EFFECT ON CARRIER MOBILITY E/T )
FANG, F
TRIEBWASSER, S
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (08) : 145 - &
[9] HIGH-GAIN MICROPOWER TRANSISTORS
GIULIANO, MN
GOINS, EW
MCLOUSKI, RM
LEINKRAM, CZ
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 712 - +
[10] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &