EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN INVERSION LAYER ON P-TYPE SILICON ( TRANSVERSE ELECTRIC FIELD EFFECT ON CARRIER MOBILITY E/T )

被引：16

作者：

FANG, F

TRIEBWASSER, S

机构：

来源：

关键词：

D O I：

10.1063/1.1754005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：145 / &

共 7 条

[1]

FOWLER AB, TO BE PUBLISHED

[2]

KAHNG K, 1960, IREAIEE SOLID STATE

[3] SEMICONDUCTOR SURFACE VARACTOR [J].

LINDNER, R .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+

[4] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].

SCHRIEFFER, JR .

PHYSICAL REVIEW, 1955, 97 (03) :641-646

SHOCKLEY, W ;

PEARSON, GL .

PHYSICAL REVIEW, 1948, 74 (02) :232-233

TERMAN, LM .

[7] TFT - NEW THIN-FILM TRANSISTOR [J].

WEIMER, PK .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06) :1462-&