ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION

被引：70

作者：

MAEDA, M

ARITA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6852 / 6856

页数：5

共 14 条

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[9] ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA [J].

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SMITH, TE .

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[10] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

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