ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION

被引：70

作者：

MAEDA, M

ARITA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：6852 / 6856

页数：5

相关论文

共 14 条

[11] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

STEIN, HJ ;

WELLS, VA ;

HAMPY, RE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1750-1754

[12] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J].

STERLING, HF ;

SWANN, RCG .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :653-&

[13] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].

SWANN, RCG ;

MEHTA, RR ;

CAUGE, TP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :713-&

[14] CHARACTERIZATION OF SILICON NITRIDE FILMS [J].

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1341-&