CHARACTERIZATION OF SILICON NITRIDE FILMS

被引：233

作者：

TAFT, EA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 08期

关键词：

D O I：

10.1149/1.2408318

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1341 / &

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[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
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[2] PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 361 - 362
[3] SILICON NITRIDE THIN FILM DIELECTRIC
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) : 98 - 100
[4] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
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GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[5] PROPERTIES OF SIXOYNZ FILMS ON SI
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TAFT, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
[6] BROWN GA, 1969, J ELECTROCHEM SOC, V116, P948
[7] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS
BURKHARDT, PJ
MARVEL, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 864 - +
[8] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
LEE, CH
GRUBER, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 717 - &
[9] FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 318 - &
[10] COLEMAN MV, 1968, PHYS STATUS SOLIDI, V25, P24

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