THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[2] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 574 - &

[3] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &

[4] DOO VY, PRIVATE COMMUNICATIO

[5] Erfling HD, 1942, ANN PHYS-BERLIN, V41, P467

[6] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1958, 112 (01): : 136 - 140

[7] THERMAL EXPANSION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) : 211 - 211

[8] POPPER P, 1961, BRIT CERAM T, V60, P603

[9] THERMAL EXPANSION COEFFICIENT OF A PYROLITICALLY DEPOSITED SILICON NITRIDE FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) : 1252 - &

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[2] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 574 - &

[3] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &

[4] DOO VY, PRIVATE COMMUNICATIO

[5] Erfling HD, 1942, ANN PHYS-BERLIN, V41, P467

[6] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1958, 112 (01): : 136 - 140

[7] THERMAL EXPANSION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) : 211 - 211

[8] POPPER P, 1961, BRIT CERAM T, V60, P603

[9] THERMAL EXPANSION COEFFICIENT OF A PYROLITICALLY DEPOSITED SILICON NITRIDE FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) : 1252 - &