FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES

被引:54
作者
CHU, TL
SZEDON, JR
LEE, CH
机构
关键词
D O I
10.1149/1.2411154
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:318 / &
相关论文
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[2]   PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].
CHU, TL ;
SZEDON, JR ;
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SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&
[3]   EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].
HU, SM ;
KERR, DR ;
GREGOR, LV .
APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&
[4]  
HU SM, 1966, J ELECTROCHEM SOC, V113, P697
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LANG GA, 1963, RCA REV, V24, P488
[6]  
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