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PROPERTIES OF SIXOYNZ FILMS ON SI

被引：181
作者：
BROWN, DM
GRAY, PV
HEUMANN, FK
PHILIPP, HR
TAFT, EA
机构：
[1] General Electric Research and Development Center, Schenectady, New York
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 03期
关键词：
D O I：
10.1149/1.2411151
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The properties of silicon nitride, oxynitride, and oxide films formed by the pyrolysis of various mixtures of SiH4, NH3, and NO are presented. The variation in physical, optical, and electrical properties of this oxynitride (SixOy,Nz) series is examined. The electrical and passivation properties of these films on Si are examined and compared with oxides. These electrical data describe the general characteristics of nitride and oxynitride on top of Si and over thin (~300Å) and thick (~1000Å) thermal oxide films. © 1968, The Electrochemical Society, Inc. All rights reserved.
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页码：311 / &
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