THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION

被引：170

作者：

FAIR, RB ^{[1
]}

SUN, RC ^{[1
]}

机构：

[1] BELL TEL LABS INC,ALLENTOWN,PA 18103

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 01期

关键词：

D O I：

10.1109/T-ED.1981.20287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / 94

页数：12

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