DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：230

作者：

LUCOVSKY, G

RICHARD, PD

TSU, DV

LIN, SY

MARKUNAS, RJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573832

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：681 / 688

页数：8

共 17 条

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[3] Chapman B., 1980, GLOW DISCHARGE PROCE
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[5] GALEENER FL, 1976, PHYS REV LETT, V37, P1414
[6] R F PLASMA DEPOSITION OF SILICON-NITRIDE LAYERS
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[J]. THIN SOLID FILMS, 1978, 55 (01) : 143 - 148
[7] JOLLY WL, 1969, ADV CHEM, V80, P156
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[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (01) : 73 - 77
[10] NEAR-NEIGHBOR CHEMICAL BONDING EFFECTS ON SI ATOM NATIVE BONDING DEFECTS IN SILICON-NITRIDE AND SILICON DIOXIDE INSULATORS
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