NEAR-NEIGHBOR CHEMICAL BONDING EFFECTS ON SI ATOM NATIVE BONDING DEFECTS IN SILICON-NITRIDE AND SILICON DIOXIDE INSULATORS

[1] Doering E., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P208

[2] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744

[3] ELECTRON TRAPPING STATES IN A-SI-(H,O) AND A-SI-(H,N) ALLOYS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 291 - 296

[4] CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS-SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 741 - 744

[5] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576

[6] LUCOVSKY G, 1984, AIP C P, V120, P55

[7] PLASMA-PROMOTED DEPOSITION OF THIN INORGANIC FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 420 - 427

[8] REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 867 - 872

[9] RICHARD PD, 1984, MAY WORKSH DIEL SYST

[10] GAP STATES IN SILICON-NITRIDE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 415 - 417

[1] Doering E., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P208

[2] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744

[3] ELECTRON TRAPPING STATES IN A-SI-(H,O) AND A-SI-(H,N) ALLOYS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 291 - 296

[4] CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS-SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 741 - 744

[5] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576

[6] LUCOVSKY G, 1984, AIP C P, V120, P55

[7] PLASMA-PROMOTED DEPOSITION OF THIN INORGANIC FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 420 - 427

[8] REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 867 - 872

[9] RICHARD PD, 1984, MAY WORKSH DIEL SYST

[10] GAP STATES IN SILICON-NITRIDE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 415 - 417