ELECTRON TRAPPING STATES IN A-SI-(H,O) AND A-SI-(H,N) ALLOYS

被引：6

作者：

LIN, SY ^{[1
]}

LUCOVSKY, G ^{[1
]}

POLLARD, WB ^{[1
]}

机构：

[1] MOREHOUSE COLL, ATLANTA, GA 30314 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 66卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90334-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：291 / 296

页数：6

共 11 条

[1] DEFECT STATES IN IRRADIATED A-SINX-H
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 601 - 604
[2] PHOTOEMISSION-STUDY OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2)
KARCHER, R
JOHNSON, RL
LEY, L
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 593 - 596
[3] BULK ELECTRONIC-STRUCTURE OF SIO2
LAUGHLIN, RB
JOANNOPOULOS, JD
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5228 - 5237
[4] Ley L., 1984, PHYSICS HYDROGENATED, P61
[5] OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS
LUCOVSKY, G
YANG, J
CHAO, SS
TYLER, JE
CZUBATYJ, W
[J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3225 - 3233
[6] DIFFERENCES BETWEEN THE BONDING OF OXYGEN IN GLOW-DISCHARGE DEPOSITED A-SI-H AND A-GE-H
LUCOVSKY, G
CHAO, SS
YANG, J
TYLER, JE
CZUBATYJ, W
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 99 - 104
[7] NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS
LUCOVSKY, G
YANG, J
CHAO, SS
TYLER, JE
CZUBATYJ, W
[J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3234 - 3240
[8] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ROBERTSON, J
[J]. ADVANCES IN PHYSICS, 1983, 32 (03) : 361 - 452
[9] PREPARATION AND PROPERTIES OF GLOW-DISCHARGE DEPOSITED AMORPHOUS SI-N-H ALLOYS FROM SIH4, N-2, AND H-2 GASES
SASAKI, G
TANAKA, T
OKAMOTO, M
FUJITA, S
SASAKI, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 597 - 600
[10] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676

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