PREPARATION AND PROPERTIES OF GLOW-DISCHARGE DEPOSITED AMORPHOUS SI-N-H ALLOYS FROM SIH4, N-2, AND H-2 GASES

被引：4

作者：

SASAKI, G

TANAKA, T

OKAMOTO, M

FUJITA, S

SASAKI, A

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90654-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：597 / 600

页数：4

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[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16
[2] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H
KURATA, H
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
[3] ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING
NOGUCHI, T
USUI, S
SAWADA, A
KANOH, Y
KIKUCHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L485 - L487
[4] PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SINX ALLOYS
SASAKI, G
KONDO, M
FUJITA, S
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1394 - 1399
[5] DEFECT STATES AND DONORS IN THERMALLY ANNEALED OR POST-HYDROGENATED CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SINX ALLOY
SASAKI, G
FUJITA, S
SASAKI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2696 - 2700