ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE

被引：326

作者：

ANDERSON, DA ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 01期

关键词：

D O I：

10.1080/14786437708235967

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 16

页数：16

共 23 条

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[7]

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[8] PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE [J].

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[9] DIRECT EVIDENCE FOR HOMONUCLEAR BONDS IN AMORPHOUS SIC [J].

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[10] ELECTRICAL CONDUCTION THROUGH THIN AMORPHOUS SIC FILMS [J].

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