PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE

The photoemission of both electrons and holes from degenerate silicon into thin (160-270 Å) layers of silicon nitride has been observed. The threshold energies for these processes are found to be 3.17 ± 0.1 eV for electrons and 3.06 ± 0.1 eV for holes. In addition, the photoemission of electrons from aluminum into silicon nitride has been observed; the threshold energy in this case is 2.11 ± 0.1 eV. An approximate electron energy band diagram for silicon nitride based on these values is presented. © 1968 The American Institute of Physics.