PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE

被引：89

作者：

GOODMAN, AM

机构：

来源：

PHYSICAL REVIEW | 1966年 / 152卷 / 02期

关键词：

D O I：

10.1103/PhysRev.152.780

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：780 / &

共 14 条

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[3]

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[5]

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[9] PHOTOEMISSION OF HOLES FROM TIN INTO GALLIUM ARSENIDE [J].

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[10] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE [J].

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