PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE

被引：43

作者：

WILLIAMS, R

机构：

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D O I：

10.1063/1.1708558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1491 / &

共 10 条

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[5] HOFSTEIN SR, 1965, JUN SOL STAT DEV RES
[6] ROSE A, 1963, CONCEPTS PHOTOCONDUC, P139
[7] ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON
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BRENNEMANN, AE
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 400 - +
[8] ION TRANSPORT PHENOMENA IN INSULATING FILMS
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SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &
[9] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS
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YOUNG, DR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 368 - +
[10] WILLIAMS R, 1965, PHYS REV, VA140, P569