ION TRANSPORT PHENOMENA IN INSULATING FILMS

被引：524

作者：

SNOW, EH

GROVE, AS

DEAL, BE

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 05期

关键词：

D O I：

10.1063/1.1703105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1664 / &

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共 21 条

[1] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
BROWN, WL
[J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527
[2] Carslaw H. S., 1959, CONDUCTION HEAT SOLI
[3] CURIE J, 1886, CR HEBD ACAD SCI, V130, P930
[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[5] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
SAH, CT
SNOW, EH
DEAL, BE
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &
[6] HEIL O, 1939, Patent No. 439457
[7] REVIEW OF GERMANIUM SURFACE PHENOMENA
KINGSTON, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114
[8] KOENJIAN E, 1963, MICROELECTRONICS, pCH5
[9] FIELD EFFECT ON SILICON
MILLEA, MF
HALL, TC
KOPPLIN, JO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 611 - &
[10] AG ION MIGRATION IN ALPHA QUARTZ
MILNE, EL
GIBBS, P
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2364 - &