FIELD EFFECT ON SILICON

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] COOVERT RC, 1960, THESIS U ILLINOIS

[4] CRISTENSEN H, 1954, P I RADIO ENGRS, V42, P1371

[5] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[6] REVIEW OF GERMANIUM SURFACE PHENOMENA [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114

[7] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[8] LITOVCHENKO VG, 1960, SOV PHYS-SOL STATE, V1, P1470

[9] SURFACE MOBILITY IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (08) : 276 - 278

[10] PENMAN S, 1955, PHYS REV, V100, P1259

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] COOVERT RC, 1960, THESIS U ILLINOIS

[4] CRISTENSEN H, 1954, P I RADIO ENGRS, V42, P1371

[5] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[6] REVIEW OF GERMANIUM SURFACE PHENOMENA [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114

[7] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[8] LITOVCHENKO VG, 1960, SOV PHYS-SOL STATE, V1, P1470

[9] SURFACE MOBILITY IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (08) : 276 - 278

[10] PENMAN S, 1955, PHYS REV, V100, P1259