ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER X, 1953, PHILOS MAG, V44, P1355

[3] BROOKS H, 1951, PHYS REV, V83, P879

[4] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[5] CONWELL EM, UNPUBLISHED

[6] DRESSELHAUS, 1953, PHYS REV, V92, P827

[7] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1952, 88 (04): : 893 - 894

[8] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[9] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[10] Gudden B., 1935, Z TECH PHYS, V16, P323

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER X, 1953, PHILOS MAG, V44, P1355

[3] BROOKS H, 1951, PHYS REV, V83, P879

[4] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[5] CONWELL EM, UNPUBLISHED

[6] DRESSELHAUS, 1953, PHYS REV, V92, P827

[7] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1952, 88 (04): : 893 - 894

[8] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[9] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[10] Gudden B., 1935, Z TECH PHYS, V16, P323