ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS

[1] CASTELLAN GW, 1951, P READING C SEMICOND, P8

[2] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[3] CHANGE OF ACTIVATION ENERGY WITH IMPURITY CONCENTRATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (379): : 663 - 664

[4] WHITTAKER ET, 1950, MODERN ANAL, P338

[5] On the possibility of a metallic modification of hydrogen [J]. JOURNAL OF CHEMICAL PHYSICS, 1935, 3 (12) : 764 - 770

[1] CASTELLAN GW, 1951, P READING C SEMICOND, P8

[2] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[3] CHANGE OF ACTIVATION ENERGY WITH IMPURITY CONCENTRATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (379): : 663 - 664

[4] WHITTAKER ET, 1950, MODERN ANAL, P338

[5] On the possibility of a metallic modification of hydrogen [J]. JOURNAL OF CHEMICAL PHYSICS, 1935, 3 (12) : 764 - 770