ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS

[1] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[2] BUSCH G, 1946, HELV PHYS ACTA, V19, P167

[3] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[4] ERGINSOY C, UNPUB

[5] RESISTIVITY OF SEMICONDUCTORS CONTAINING BOTH ACCEPTORS AND DONORS [J]. PHYSICAL REVIEW, 1950, 79 (03): : 535 - 536

[6] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (04): : 726 - 727

[7] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (04): : 727 - 728

[8] MOTT NF, 1948, ELECTRONIC PROCESSES, P81

[9] PEARSON GL, 1947, PHYS REV, V71, P142

[10] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[1] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[2] BUSCH G, 1946, HELV PHYS ACTA, V19, P167

[3] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[4] ERGINSOY C, UNPUB

[5] RESISTIVITY OF SEMICONDUCTORS CONTAINING BOTH ACCEPTORS AND DONORS [J]. PHYSICAL REVIEW, 1950, 79 (03): : 535 - 536

[6] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (04): : 726 - 727

[7] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1950, 79 (04): : 727 - 728

[8] MOTT NF, 1948, ELECTRONIC PROCESSES, P81

[9] PEARSON GL, 1947, PHYS REV, V71, P142

[10] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883