PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE

被引:73
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GOODMAN, AM
ONEILL, JJ
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10.1063/1.1708906
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O59 [应用物理学];
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页码:3580 / &
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[2]   ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].
CROWELL, CR ;
HOWARTH, LE ;
SPITZER, WG ;
LABATE, EE .
PHYSICAL REVIEW, 1962, 127 (06) :2006-&
[3]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[4]   PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 144 (02) :588-&
[5]   ELECTRONEGATIVITIES OF THE ELEMENTS [J].
GORDY, W ;
THOMAS, WJO .
JOURNAL OF CHEMICAL PHYSICS, 1956, 24 (02) :439-444
[6]  
HUGHES AL, 1932, PHOTOELECTRIC PHENOM, P241
[7]  
LEVINE J, PRIVATE COMMUNICATIO
[8]  
MEAD CA, 1965, NATURE METALSEMICOND
[9]  
Mott N. F., 1948, ELECT PROCESSES IONI, P168
[10]  
MOTT NF, 1948, ELECTRONIC PROCESSES, P169