PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE

被引：73

作者：

GOODMAN, AM

ONEILL, JJ

机构：

来源：

关键词：

D O I：

10.1063/1.1708906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3580 / &

共 16 条

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ATALLA, MM ;

CROWELL, CR .

[14] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

SPITZER, WG ;

MEAD, CA .

[15] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J].

WILLIAMS, R .

PHYSICAL REVIEW, 1965, 140 (2A) :A569-&

[16]

1963, AMERICAN I PHYSICS H, P147