PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE

被引：65

作者：

GOODMAN, AM

机构：

来源：

PHYSICAL REVIEW | 1966年 / 152卷 / 02期

关键词：

D O I：

10.1103/PhysRev.152.785

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：785 / +

页数：1

共 10 条

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[2] OPTICAL PROPERTIES OF HEAVILY DOPED COMPENSATED GERMANIUM
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[3] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE
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[4] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM
HAAS, C
[J]. PHYSICAL REVIEW, 1962, 125 (06): : 1965 - &
[5] Moss TS., 1959, OPTICAL PROPERTIES S
[6] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV
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TAFT, EA
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38
[7] SUBASHIEV VK, 1964, SOV PHYS-SOL STATE, V6, P1017
[8] SUBASHIEV VK, 1964, FIZ TVERD TELA, V6, P1303
[9] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1491 - &
[10] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE
WILLIAMS, R
[J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &