PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE

被引：58

作者：

GOODMAN, AM

机构：

[1] RCA Laboratories

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 08期

关键词：

D O I：

10.1063/1.1652607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoemission of both electrons and holes from degenerate silicon into thin (160-270 Å) layers of silicon nitride has been observed. The threshold energies for these processes are found to be 3.17 ± 0.1 eV for electrons and 3.06 ± 0.1 eV for holes. In addition, the photoemission of electrons from aluminum into silicon nitride has been observed; the threshold energy in this case is 2.11 ± 0.1 eV. An approximate electron energy band diagram for silicon nitride based on these values is presented. © 1968 The American Institute of Physics.

引用

页码：275 / &

共 18 条

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