DIFFERENCES BETWEEN THE BONDING OF OXYGEN IN GLOW-DISCHARGE DEPOSITED A-SI-H AND A-GE-H

被引：24

作者：

LUCOVSKY, G ^{[1
]}

CHAO, SS ^{[1
]}

YANG, J ^{[1
]}

TYLER, JE ^{[1
]}

CZUBATYJ, W ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 66卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90305-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：99 / 104

页数：6

共 10 条

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[4] IR ABSORPTION IN GLOW-DISCHARGE-DEPOSITED A-SI-(D,O) AND A-SI-(D,N) ALLOY-FILMS [J].

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[5] OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].

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CZUBATYJ, W .

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[6] A STRUCTURAL INTERPRETATION OF THE INFRARED-ABSORPTION SPECTRA OF A-SI-H-O ALLOYS [J].

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SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :165-175

[7] NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS [J].

LUCOVSKY, G ;

YANG, J ;

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TYLER, JE ;

CZUBATYJ, W .

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[8]

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[9]

Rochow EG, 1973, COMPREHENSIVE INORGA, V1, P1323

[10]

ROCHOW EG, 1973, COMPREHENSIVE INORGA, V2, P1

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