IR ABSORPTION IN GLOW-DISCHARGE-DEPOSITED A-SI-(D,O) AND A-SI-(D,N) ALLOY-FILMS

被引：31

作者：

LUCOVSKY, G ^{[1
]}

YANG, J ^{[1
]}

CHAO, SS ^{[1
]}

TYLER, JE ^{[1
]}

CZUBATYJ, W ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.29.2302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2302 / 2305

页数：4

共 9 条

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[4] NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS [J].

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[5]

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[7] PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON [J].

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[8] PHONONS IN POLYSILANE ALLOYS [J].

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[9] CHARACTERIZATION OF SILICON NITRIDE FILMS [J].

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