GAP STATES IN SILICON-NITRIDE

[1] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1014 - 1018

[2] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 484 - 487

[3] Balk P., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P204

[4] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274

[5] HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 711 - 713

[6] HEZEL R, 1982, RADIAT EFF, V65, P107

[7] HSIA Y, 1980, JPN J APPL S191, V19, P351

[8] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 454 - 456

[9] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565

[10] VALENCE ALTERNATION PAIR MODEL OF CHARGE STORAGE IN MNOS MEMORY DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4190 - 4195

[1] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1014 - 1018

[2] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 484 - 487

[3] Balk P., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P204

[4] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274

[5] HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 711 - 713

[6] HEZEL R, 1982, RADIAT EFF, V65, P107

[7] HSIA Y, 1980, JPN J APPL S191, V19, P351

[8] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 454 - 456

[9] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565

[10] VALENCE ALTERNATION PAIR MODEL OF CHARGE STORAGE IN MNOS MEMORY DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4190 - 4195