CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE

被引：160

作者：

JOHNSON, NM ^{[1
]}

BIEGELSEN, DK ^{[1
]}

MOYER, MD ^{[1
]}

CHANG, ST ^{[1
]}

POINDEXTER, EH ^{[1
]}

CAPLAN, PJ ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

关键词：

D O I：

10.1063/1.94420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：563 / 565

页数：3

共 15 条

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SVENSSON, C
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[3] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
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[4] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
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[5] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H
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[6] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES
JOHNSON, NM
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[7] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 303 - 314
[8] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS
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MCVITTIE, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1407 - 1411
[9] JOHNSON NM, 1980, PHYSICS MOS INSULATO, P311
[10] JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421