MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS

被引：36

作者：

JOHNSON, NM

BARTELINK, DJ

MCVITTIE, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1407 / 1411

页数：5

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