ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES

被引：94

作者：

JOHNSON, NM

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method is described for determining the energy of emitting centers in an interface-state continuum independently of the emission rate in transient-capacitance measurements on MIS structures. Deep-level transient spectroscopy (DLTS) is performed in the double-correlation mode to analyze the energy profile of a continuous interface-trap distribution. With this method, DLTS can be used to evaluate interface-state distributions with energy-dependent capture cross sections, and the extraneous effects of bulk defect levels in the semiconductor are minimized. Experimental results are presented for electron traps at the Si-SiO2 interface.

引用

页码：802 / 804

页数：3

共 12 条

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