DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS

被引：27

作者：

KRIEGLER, RJ

DEVENYI, TF

CHIK, KD

SHAPPIR, J

机构：

[1] Bell-Northern Research, Ottawa, Ont.

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.325678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel experimental method is described that allows the determination of surface-state capture cross section for minority carriers and the calculation of surface-state densities from transfer-loss measurements in surface channel CCD's. Using two-level polysilicon two-phase n-channel CCD's, σn(E) was found to vary between about 5×10-17 and 2×10-16 cm2, and Nss(E) between 1.7×1011 and 9×109 cm-2 eV -1 in an energy range of 0.05 to 0.42 eV below the conduction-band edge.

引用

页码：398 / 401

页数：4

共 14 条

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