DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS

被引:27
作者
KRIEGLER, RJ
DEVENYI, TF
CHIK, KD
SHAPPIR, J
机构
[1] Bell-Northern Research, Ottawa, Ont.
关键词
D O I
10.1063/1.325678
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel experimental method is described that allows the determination of surface-state capture cross section for minority carriers and the calculation of surface-state densities from transfer-loss measurements in surface channel CCD's. Using two-level polysilicon two-phase n-channel CCD's, σn(E) was found to vary between about 5×10-17 and 2×10-16 cm2, and Nss(E) between 1.7×1011 and 9×109 cm-2 eV -1 in an energy range of 0.05 to 0.42 eV below the conduction-band edge.
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页码:398 / 401
页数:4
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