TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES

被引：96

作者：

SCHULZ, M ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 09期

关键词：

D O I：

10.1063/1.89774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：622 / 625

页数：4

相关论文

共 7 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] SPECTRUM AND NATURE OF SURFACE STATES
FLIETNER, H
[J]. SURFACE SCIENCE, 1974, 46 (01) : 251 - 264
[3] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[4] JOHNSON NM, UNPUBLISHED
[5] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022
[6] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS
LEFEVRE, H
SCHULZ, M
[J]. APPLIED PHYSICS, 1977, 12 (01): : 45 - 53
[7] SCHULZ M, TO BE PUBLISHED