SPECTRUM AND NATURE OF SURFACE STATES

被引：33

作者：

FLIETNER, H ^{[1
]}

机构：

[1] DAWB,ZENT INST ELEKTR PHYS,ABT HALBLEITER ELEKTR,BERLIN,EAST GERMANY

来源：

SURFACE SCIENCE | 1974年 / 46卷 / 01期

关键词：

D O I：

10.1016/0039-6028(74)90251-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：251 / 264

页数：14

共 46 条

[1]

ARNOLD E, 1968, IEEE T ELECTRON DEVI, VED15, P1003

[2] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].

CASTAGNE, R ;

VAPAILLE, A .

SURFACE SCIENCE, 1971, 28 (01) :157-+

[3] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[4] MODEL FOR INTERFACE STATES IN SILICON/SILICON DIOXIDE STRUCTURE [J].

CHENG, YC .

SURFACE SCIENCE, 1970, 23 (02) :432-&

[5]

DAVISON SG, 1970, SOLID STATE PHYS, V25, P1

[6] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[7] E(K) RELATION FOR A 2-BAND SCHEME OF SEMICONDUCTORS AND APPLICATION TO METAL-SEMICONDUCTOR CONTACT [J].

FLIETNER, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 54 (01) :201-208

[8] INFLUENCE OF CRYSTAL ORIENTATION AND OXIDE STRUCTURE ON INTERFACE STATES OF GE-GEO2 [J].

FLIETNER, H ;

OERTEL, G .

PHYSICA STATUS SOLIDI, 1970, 41 (01) :93-&

[9] EIGENSCHAFTEN GEWOHNLICHER HALBLEITEROBERFLACHEN [J].

FLIETNER, H .

PHYSICA STATUS SOLIDI, 1962, 2 (03) :221-281

[10]

FLIETNER H, 1973, ARBEITSTAGUNG PHYSIK, P155

← 1 2 3 4 5 →