PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS

被引：229

作者：

EASTMAN, DE

GROBMAN, WD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1972年 / 28卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.28.1378

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1378 / &

共 11 条

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[7]

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[8] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

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[9] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].

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[10]

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