MODEL FOR INTERFACE STATES IN SILICON/SILICON DIOXIDE STRUCTURE

被引：9

作者：

CHENG, YC

机构：

来源：

SURFACE SCIENCE | 1970年 / 23卷 / 02期

关键词：

D O I：

10.1016/0039-6028(70)90168-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：432 / &

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[9] NEW MODEL FOR INTERFACE CHARGE-CARRIER MOBILITY - ROLE OF MISFIT DISLOCATIONS
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[10] CONTRIBUTION TO THE THEORY OF SURFACE AND CHEMISORPTION ELECTRONIC STATES ON VARIOUS CRYSTAL PLANES WITH SPECIAL REFERENCE TO THE DIAMOND-LIKE LATTICE
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