NEW MODEL FOR INTERFACE CHARGE-CARRIER MOBILITY - ROLE OF MISFIT DISLOCATIONS

被引：19

作者：

NEUMARK, GF

机构：

[1] Philips Laboratories, Briarcliff Manor

来源：

PHYSICAL REVIEW LETTERS | 1968年 / 21卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.21.1252

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is suggested that consideration of misfit dislocations is essential for analysis of mobility in metal-oxide-semiconductor inversion layers. Occurrence of such dislocations is generally expected for interfaces. Also, aspects of surface" state behavior fit well with the dislocation model. © 1968 The American Physical Society."

引用

页码：1252 / +

页数：1

共 33 条

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J].

ARNOLD, E ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1966, 9 (09) :344-&

[2]

ARNOLD E, PRIVATE COMMUNICATIO

[3]

ARNOLD E, TO BE PUBLISHED

[4] THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS [J].

BROUDY, RM .

ADVANCES IN PHYSICS, 1963, 12 (46) :135-184

[5] ELECTRON AND PHONON BOUND STATES AND SCATTERING RESONANCES FOR EXTENDED DEFECTS IN CRYSTALS [J].

BROWN, RA .

PHYSICAL REVIEW, 1967, 156 (03) :889-+

[6] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].

CONWELL, EM .

PHYSICAL REVIEW, 1956, 103 (01) :51-60

[7]

DEMIKHOVSKII VY, 1964, SOV PHYS-SOL STATE, V6, P743

[8]

DEMIKHOVSKII VY, 1964, FIZ TVERD TELA, V6, P960

[9] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[10] STRUCTURE AND ENERGY OF CRYSTAL INTERFACES .I. FORMAL DEVELOPMENT [J].

FLETCHER, NH ;

ADAMSON, PL .

PHILOSOPHICAL MAGAZINE, 1966, 14 (127) :99-&

← 1 2 3 4 →