IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON

被引：215

作者：

CONWELL, EM

机构：

来源：

PHYSICAL REVIEW | 1956年 / 103卷 / 01期

关键词：

D O I：

10.1103/PhysRev.103.51

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：51 / 60

页数：10

共 35 条

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS
AIGRAIN, P
[J]. PHYSICA, 1954, 20 (11): : 978 - 982
[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[3] IMPURITY CENTERS IN GE AND SI
BURTON, JA
[J]. PHYSICA, 1954, 20 (10): : 845 - 854
[4] HALL EFFECT AND DENSITY OF STATES IN GERMANIUM
CONWELL, EM
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1195 - 1198
[5] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[6] EFFECTIVE MASSES OF HOLES IN SILICON
DEXTER, RN
LAX, B
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224
[7] DRESSELHAUS, 1953, PHYS REV, V92, P827
[8] EPSTEIN A, 1954, PHYS REV, V94, P1426
[9] FLETCHER, 1954, PHYS REV, V94, P1392
[10] FLETCHER, 1954, PHYS REV, V95, P844