IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON

[21] JOHNSON VA, 1955, PHYS REV, V98, P1567

[22] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 96 (06): : 1488 - 1493

[23] THEORY OF ACCEPTOR LEVELS IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (06): : 1903 - 1904

[24] GROUND STATE OF IMPURITY ATOMS IN SEMICONDUCTORS HAVING ANISOTROPIC ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 97 (02): : 352 - 353

[25] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883

[26] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[27] Mott NF, 1936, P CAMB PHILOS SOC, V32, P281

[28] PAULING L, 1935, INTRO QUANTUM MECHAN, P327

[29] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[30] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687

[21] JOHNSON VA, 1955, PHYS REV, V98, P1567

[22] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 96 (06): : 1488 - 1493

[23] THEORY OF ACCEPTOR LEVELS IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (06): : 1903 - 1904

[24] GROUND STATE OF IMPURITY ATOMS IN SEMICONDUCTORS HAVING ANISOTROPIC ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 97 (02): : 352 - 353

[25] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883

[26] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[27] Mott NF, 1936, P CAMB PHILOS SOC, V32, P281

[28] PAULING L, 1935, INTRO QUANTUM MECHAN, P327

[29] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[30] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687