A PROPOSAL CONCERNING NATURE OF INTERFACE STATES IN SI/SIO2

被引：3

作者：

CHENG, YC

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(70)90196-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：434 / &

共 8 条

[1] CHENG YC, TO BE PUBLISHED
[2] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[3] GUMMEL H, 1957, ANN PHYS, V2, P562
[4] CASCADE CAPTURE OF ELECTRONS IN SOLIDS
LAX, M
[J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523
[5] NEW MODEL FOR INTERFACE CHARGE-CARRIER MOBILITY - ROLE OF MISFIT DISLOCATIONS
NEUMARK, GF
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (17) : 1252 - +
[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[7] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[8] WHELAN MV, 1965, PHILIPS RES REP, V20, P562