NITROGEN ACTIVATION FOR PLASMA CHEMICAL SYNTHESIS OF THIN SI3N4 FILMS

被引：12

作者：

BARDOS, L

MUSIL, J

TARAS, P

机构：

来源：

THIN SOLID FILMS | 1983年 / 102卷 / 02期

关键词：

D O I：

10.1016/0040-6090(83)90142-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：107 / 110

页数：4

共 8 条

[1] DIFFERENCES BETWEEN MICROWAVE AND RF ACTIVATION OF NITROGEN FOR THE PECVD PROCESS [J].

BARDOS, L ;

MUSIL, J ;

TARAS, P .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (07) :L79-L82

[2]

BARDOS L, UNPUB

[3] ACTIVE NITROGEN [J].

MANNELLA, GG .

CHEMICAL REVIEWS, 1963, 63 (01) :1-&

[4]

MCTAGGART FK, 1967, PLASMA CHEM ELECTRIC, pCH8

[5]

SHIBAGAKI M, 1977 EL SOC FALL M A, P416

[6] PREPARATION OF NITRIDES BY ACTIVE NITROGEN .2. SI3N4 [J].

SHILOH, M ;

GAYER, B ;

BRINCKMAN, FE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :295-300

[7] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J].

STERLING, HF ;

SWANN, RCG .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :653-&

[8] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS [J].

YOKOYAMA, S ;

KAJIHARA, N ;

HIROSE, M ;

OSAKA, Y ;

YOSHIHARA, T ;

ABE, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5470-5474

← 1 →