CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS

被引:47
作者
YOKOYAMA, S [1 ]
KAJIHARA, N [1 ]
HIROSE, M [1 ]
OSAKA, Y [1 ]
YOSHIHARA, T [1 ]
ABE, H [1 ]
机构
[1] MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO 664,JAPAN
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.327505
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5470 / 5474
页数:5
相关论文
共 15 条
  • [1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
    BRODSKY, MH
    FRISCH, MA
    ZIEGLER, JF
    LANFORD, WA
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
  • [3] PROPERTIES OF SIXOYNZ FILMS ON SI
    BROWN, DM
    GRAY, PV
    HEUMANN, FK
    PHILIPP, HR
    TAFT, EA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
  • [4] DAVIS LE, 1976, HDB AUGER ELECTRON S, P13
  • [5] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
  • [6] LANFORD WA, 1978, J APPL PHYS, V49, P2474
  • [7] Osaka Y., 1976, Oyo Buturi, V45, P968
  • [8] ELECTRICAL-CONDUCTION OF SILICON-NITRIDE FILMS
    POPOVA, L
    ANTOV, B
    VITANOV, P
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (05) : 487 - 495
  • [9] SOME APPLICATIONS OF INTENSITY MEASUREMENTS IN THE INFRA-RED
    RICHARDS, RE
    BURTON, WR
    [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1949, 45 (09): : 874 - 879
  • [10] ROSLER RS, 1976, SOLID STATE TECHNOL, V19, P45