ELECTRICAL-CONDUCTION OF SILICON-NITRIDE FILMS

Current-voltage characteristics were measured on MNS capacitors with two kinds of nitride layer. For positive gate voltage the chloride-type nitride exhibits dominant bulk-limited electron conduction, while the silane-type nitride exhibits two-band conduction. For negative gate voltage both kinds of nitride exhibit dominant hole conduction resulting from a massive hole injection and trapping. Recently proposed models are used to interpret the experimental results.