2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE

被引：108

作者：

GINOVKER, AS ^{[1
]}

GRITSENKO, VA ^{[1
]}

SINITSA, SP ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,SIBERIAN BRANCH,NOVOSIBIRSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssa.2210260211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：489 / 495

页数：7

共 14 条

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[3] STRUCTURE OF AMORPHOUS SILICON NITRIDE FILMS
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[4] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[5] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1207 - +
[6] Ginovker A S, 1973, MIKROELEKTRONIKA, V2, P283
[7] GINOVKER AS, 1973, ALL UNION C LENINGRA, V3, P31
[8] GINOVKER AS, 1972, ELEKTRONNAYA TEKHN 2, P75
[9] GINOVKER AS, 1971, 4 ALL UN C EL PROC S
[10] ELECTRONIC PROCESSES IN METAL-SILICON NITRIDE SILICON DIOXIDE SILICON SYSTEMS
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