ELECTRONIC PROCESSES IN METAL-SILICON NITRIDE SILICON DIOXIDE SILICON SYSTEMS

[1] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[2] BURNS CR, 1970, J ELECTROCHEM SOC, V107, P98

[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[4] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &

[5] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[7] HIELSCHER PH, 1969, SOLID STATE ELECTRON, V12, P527

[8] KASHAVAN BV, 1969, APPL PHYS LETT, V14, P45

[9] KOBAYASHI K, 1971, JPN J APPL PHYS, V11, P555

[10] KOBAYASHI K, 1969, BUSSEI, V10, P537

[1] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[2] BURNS CR, 1970, J ELECTROCHEM SOC, V107, P98

[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[4] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &

[5] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[7] HIELSCHER PH, 1969, SOLID STATE ELECTRON, V12, P527

[8] KASHAVAN BV, 1969, APPL PHYS LETT, V14, P45

[9] KOBAYASHI K, 1971, JPN J APPL PHYS, V11, P555

[10] KOBAYASHI K, 1969, BUSSEI, V10, P537